APT50GF120LRG, IGBT Transistors IGBT NPT Low Frequency Single 1200 V 50 A TO-264

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6 040 руб.

от 10 шт. — 5 210 руб.

от 25 шт. — 5 120 руб.

от 100 шт. — 4 226.95 руб.

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Номенклатурный номер: 8004809464

Артикул: APT50GF120LRG

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

IGBT NPT 1200V 135A 781W Through Hole TO-264 [L]

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	135 A
Factory Pack Quantity: Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	781 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	SiC
Base Product Number	APT50GF120 ->
Current - Collector (Ic) (Max)	135A
Current - Collector Pulsed (Icm)	150A
ECCN	EAR99
Gate Charge	340nC
HTSUS	8541.29.0095
IGBT Type	NPT
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-264-3, TO-264AA
Power - Max	781W
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Supplier Device Package	TO-264 [L]
Switching Energy	3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25В°C	25ns/260ns
Test Condition	800V, 50A, 1Ohm, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)	1200V
Вес, г	10