APT50GN120L2DQ2G, IGBT Transistors IGBT Fieldstop Low Frequency Combi 1200 V 50 A TO-264 MAX

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4 830 руб.

от 10 шт. — 4 590 руб.

от 25 шт. — 4 240 руб.

от 100 шт. — 3 494.16 руб.

Добавить в корзину 1 шт. на сумму 4 830 руб.

Номенклатурный номер: 8004809466

Артикул: APT50GN120L2DQ2G

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Configuration:	Single
Continuous Collector Current at 25 C:	134 A
Continuous Collector Current Ic Max:	134 A
Continuous Collector Current:	134 A
Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	600 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+150 C
Package/Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	543 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	11

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