MSC060SMA070B, MOSFET MOSFET SIC 700 V 60 mOhm TO-247
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Silicon Carbide (SiC) MOSFETsMicrochip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 39 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 143 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 56 nC |
| Rds On - Drain-Source Resistance: | 69 mOhms |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Vgs - Gate-Source Voltage: | -10 V, +23 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 1655 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
