Категория	Транзистор
Тип	биполярный
Вид	NPN

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Configuration:	Single
DC Collector/Base Gain hfe Min:	100
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Manufacturer:	STMicroelectronics
Maximum Collector Cut-off Current:	10 uA
Maximum DC Collector Current:	5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	TO-252
Product Category:	Darlington Transistors
Product Type:	Darlington Transistors
Series:	MJD122
Subcategory:	Transistors
Transistor Polarity:	NPN
Brand	STMicroelectronics
Collector- Base Voltage VCBO	100 V
Collector- Emitter Voltage VCEO Max	100 V
Configuration	Single
DC Collector/Base Gain hfe Min	100
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	2500
Height	2.4 mm
Length	6.6 mm
Manufacturer	STMicroelectronics
Maximum Collector Cut-off Current	10 uA
Maximum DC Collector Current	5 A
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Package / Case	TO-252
Packaging	Reel
Product Category	Darlington Transistors
RoHS	Details
Series	MJD122T4
Transistor Polarity	NPN
Unit Weight	0.063493 oz
Width	6.2 mm
Maximum Base Emitter Saturation Voltage	4.5 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	4 V
Maximum Collector Emitter Voltage	100 V
Maximum Continuous Collector Current	16 A
Maximum Emitter Base Voltage	5 V
Minimum DC Current Gain	100
Minimum Operating Temperature	-65 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Коэффициент усиления hFE мин.	1000
Максимальная рассеиваемая мощность, Вт	20
Максимальное напряжение КЭ (Vceo), В	100
Максимальный постоянный ток коллектора, А	8
Тип	Составной транзистор(Дарлингтона)
Тип проводимости	NPN
Вес, г	2

MJD122T4, Darlington Transistors NPN Power Darlington

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