MJD122-1, Darlington Transistors NPN PWR Darlington Int Anti Collector

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4937 шт., срок 7-9 недель

290 руб.

от 10 шт. — 250 руб.

от 75 шт. — 165 руб.

от 525 шт. — 130.41 руб.

Добавить в корзину 1 шт. на сумму 290 руб.

Альтернативные предложения1

Номенклатурный номер: 8004826865

Артикул: MJD122-1

Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors

POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-251AA, PLASTIC/EPOXY, 3 PIN

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Configuration:	Single
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	12000
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	75
Manufacturer:	STMicroelectronics
Maximum Collector Cut-off Current:	10 uA
Maximum DC Collector Current:	5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-251-3
Packaging:	Tube
Pd - Power Dissipation:	20 W
Product Category:	Darlington Transistors
Product Type:	Darlington Transistors
Series:	MJD122
Subcategory:	Transistors
Transistor Polarity:	NPN
Configuration	Single
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	2@16mA@4A\|4@80mA@8A V
Maximum Collector Emitter Voltage	100 V
Minimum DC Current Gain	100@8A@4V\|1000@4A@4V
Mounting	Through Hole
Package	3TO-251
Packaging	Bulk
Peak DC Collector Current	5 A
Rad Hard	No
Type	NPN
Вес, г	0.34