MMBFJ111, JFET N-Channel Switch
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
120 руб.
от 10 шт. —
93 руб.
от 100 шт. —
49 руб.
от 1000 шт. —
31.33 руб.
Добавить в корзину 1 шт.
на сумму 120 руб.
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\JFET
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Технические параметры
| Brand: | onsemi/Fairchild |
| Configuration: | Single |
| Drain-Source Current at Vgs=0: | 5 mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gate-Source Cutoff Voltage: | -10 V |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Operating Temperature Range: | -55 C to+150 C |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | MMBFJ111_NL |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | JFET |
| Product Type: | JFETs |
| Rds On - Drain-Source Resistance: | 30 Ohms |
| Series: | MMBFJ111 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Type: | JFET |
| Vgs - Gate-Source Breakdown Voltage: | -35 V |
| Brand | ON Semiconductor/Fairchild |
| Configuration | Single |
| Drain-Source Current at Vgs=0 | 5 mA |
| Factory Pack Quantity | 3000 |
| Gate-Source Cutoff Voltage | -10 V |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 C to+150 C |
| Package / Case | SOT-23 |
| Packaging | Cut Tape |
| Part # Aliases | MMBFJ111_NL |
| Pd - Power Dissipation | 350 mW |
| Product Category | JFET |
| Rds On - Drain-Source Resistance | 30 Ohms |
| RoHS | Details |
| Series | MMBFJ111 |
| Transistor Polarity | N-Channel |
| Type | JFET |
| Unit Weight | 0.000282 oz |
| Vgs - Gate-Source Breakdown Voltage | -35 V |
| Channel Type | N |
| Drain Gate On-Capacitance | 28pF |
| Idss Drain-Source Cut-off Current | 20mA |
| Maximum Drain Gate Voltage | 35V |
| Maximum Drain Source Resistance | 30 Ω |
| Maximum Drain Source Voltage | 15 V |
| Maximum Gate Source Voltage | -35 V |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Source Gate On-Capacitance | 28pF |
| Transistor Configuration | Single |
| Width | 1.3mm |
| Вес, г | 0.018 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 444 КБ
Datasheet
pdf, 151 КБ
Datasheet MMBFJ113
pdf, 322 КБ
Документация
pdf, 451 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
