MMBFJ211, JFET NCh RF Transistor

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130 руб.

от 10 шт. — 110 руб.

от 100 шт. — 73 руб.

от 500 шт. — 54.02 руб.

Добавить в корзину 1 шт. на сумму 130 руб.

Номенклатурный номер: 8004835523

Артикул: MMBFJ211

Semiconductors\Discrete Semiconductors\Transistors\JFET

Trans JFET N-CH 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBFJ211)

Brand:	onsemi/Fairchild
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Forward Transconductance - Min:	0.006 S to 0.012 S
Gate-Source Cutoff Voltage:	-4.5 V
Id - Continuous Drain Current:	20 mA
Manufacturer:	onsemi
Maximum Drain Gate Voltage:	25 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Operating Temperature Range:	-55 C to+150 C
Package / Case:	SOT-23-3
Pd - Power Dissipation:	225 mW
Product Category:	JFET
Product Type:	JFETs
Series:	MMBFJ211
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	N-Channel
Type:	JFET
Vgs - Gate-Source Breakdown Voltage:	-25 V
Brand	ON Semiconductor/Fairchild
Configuration	Single
Factory Pack Quantity	3000
Forward Transconductance - Min	0.006 S to 0.012 S
Gate-Source Cutoff Voltage	-4.5 V
Id - Continuous Drain Current	20 mA
Manufacturer	ON Semiconductor
Maximum Drain Gate Voltage	25 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Operating Temperature Range	-55 C to+150 C
Package / Case	SOT-23
Packaging	Cut Tape
Pd - Power Dissipation	225 mW
Product	RF JFET
Product Category	RF JFET Transistors
RoHS	Details
Series	MMBFJ211
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	JFET
Type	JFET
Unit Weight	0.000282 oz
Vgs - Gate-Source Breakdown Voltage	-25 V
Вес, г	0.008