ALD212900PAL, MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
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Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Advanced Linear Devices ALD210900/ALD210900A Precision N-Channel EPAD MOSFET Arrays - INACTIVEAdvanced Linear Devices ALD210900/ALD210900A Precision N-Channel EPAD MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These dual monolithic devices are enhanced additions to the ALD110900A/ALD110900 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, they feature Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. These precision devices are versatile as design components for a broad range of analog small signal applications such as basic building blocks for current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. They also excel in limited operating voltage applications, such as very low level voltage-clamps and nano-power normally-on circuits.
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Технические параметры
Brand: | Advanced Linear Devices |
Channel Mode: | Depletion |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Id - Continuous Drain Current: | 79 mA |
Manufacturer: | Advanced Linear Devices |
Maximum Operating Temperature: | +70 C |
Minimum Operating Temperature: | 0 C |
Mounting Style: | Through Hole |
Number of Channels: | 2 Channel |
Package / Case: | PDIP-8 |
Packaging: | Tube |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 14 Ohms |
Series: | ALD212900P |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 10 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 20 mV |
California Prop 65 | Warning Information |
Current - Continuous Drain (Id) @ 25В°C | 80mA |
Drain to Source Voltage (Vdss) | 10.6V |
ECCN | EAR99 |
FET Feature | Logic Level Gate |
FET Type | 2 N-Channel (Dual) Matched Pair |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 5V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | 0В°C ~ 70В°C (TJ) |
Package | Tube |
Package / Case | 8-DIP (0.300"", 7.62mm) |
Power - Max | 500mW |
Rds On (Max) @ Id, Vgs | 14Ohm |
RoHS Status | ROHS3 Compliant |
Series | EPADВ®, Zero Thresholdв„ў -> |
Supplier Device Package | 8-PDIP |
Vgs(th) (Max) @ Id | 20mV @ 20ВµA |
Вес, г | 0.93 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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