ALD310700SCL, MOSFET Quad P-Channel EPAD Matched Pair
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
ALD31070x P-Channel EPAD® MOSFET ArraysAdvanced Linear Devices ALD31070x P-Channel EPAD ® MOSFET Arrays are high-precision monolithic quad p-channel MOSFET arrays. These MOSFET arrays belong to the EPAD ® matched pair MOSFET family. The ALD31070x MOSFET arrays are used for low-voltage and low-power small signal applications with low gate threshold voltages of 0V and -0.2V. These arrays are designed for exceptional matching of electrical device characteristics. Fabricated on the same monolithic chip, the ALD31070x arrays offer excellent temperature tracking characteristics. These MOSFET arrays feature a versatile design for various precision analog applications like current mirrors, matching circuits, and current sources.
Технические параметры
| Brand: | Advanced Linear Devices |
| Channel Mode: | Enhancement |
| Configuration: | Quad |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Id - Continuous Drain Current: | 80 mA |
| Manufacturer: | Advanced Linear Devices |
| Maximum Operating Temperature: | +70 C |
| Minimum Operating Temperature: | 0 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 4 Channel |
| Package / Case: | SOIC-16 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 1.1 kOhms |
| Series: | ALD31070 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 4 P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 20 mV |
| Вес, г | 0.67 |
Техническая документация
Datasheet
pdf, 504 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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