ALD910017SALI, MOSFET Dual SAB MOSFET ARRAY VT=1.70V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
ALD8100xx/ALD9100xx Quad/Dual SAB™ MOSFET ArraysAdvanced Linear Devices ALD8100xx/ALD9100xx Quad/Dual SAB™ MOSFET Arrays are built with production-proven EPAD® technology. The ALD8100xx/ALD9100xx Supercapacitor Auto Balancing (SAB) addresses voltage and leakage-current balancing of supercapacitors connected in series. Supercapacitors, also known as ultracapacitors or super caps, connected in series can be leakage-current balanced by using a combination of one or more devices connected across each supercapacitor stack to prevent over-voltages.
Технические параметры
| Brand: | Advanced Linear Devices |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Id - Continuous Drain Current: | 80 mA |
| Manufacturer: | Advanced Linear Devices |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 1.7 MOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 10.6 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.72 V |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 442 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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