ALD910027SAL, MOSFET Dual MOSFET ARRAY Vt=2.70V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Advanced Linear Devices ALD8100/ALD9100 SAB MOSFETsAdvanced Linear Devices ALD8100/ALD9100 SAB MOSFETs are EPAD MOSFETs designed to address leakage balance of supercapacitors connected in series. ALD SAB MOSFETs have unique electrical characteristics for active continuous leakage current regulation and self-balancing of stacked seriesconnected supercaps while practically eliminating extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple, economical and effective method to balance and regulate supercap voltages. With SAB MOSFETs, each supercap in a series-connected stack is continuously and automatically controlled for precision effective supercap leakage current and voltage balancing. The ALD8100/ALD9100 MOSFETs offer a superior alternative solution to other passive resistor-based or operational amplifier based balancing schemes, which typically contribute continuous power dissipation due to linear currents at all voltage levels. They are also a preferred alternative to other active supercap charging and balancing regulator ICs where tradeoffs in cost, efficiency, complexity and power dissipation are important design considerations. The SAB MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current exponentially across the supercap when supercap voltages increase, and by decreasing its drain current exponentially across the supercap when supercap voltages decrease. Advanced Linear Devices ALD8100/ALD9100 SAB MOSFETs offer the user a selection of different threshold voltages for various supercap nominal voltage values and desired leakage balancing characteristics.
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Технические параметры
Brand: | Advanced Linear Devices |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Id - Continuous Drain Current: | 80 mA |
Manufacturer: | Advanced Linear Devices |
Maximum Operating Temperature: | +70 C |
Minimum Operating Temperature: | 0 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOIC-8 |
Packaging: | Tube |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 2.7 MOhms |
Series: | ALD910027S |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SAB |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 10.6 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 2.72 V |
Вес, г | 0.085 |
Техническая документация
Datasheet
pdf, 442 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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