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CSD18503Q5A, MOSFET 40V N-Channel NexFET Power MOSFET

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450 руб.

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Номенклатурный номер: 8004997228

Артикул: CSD18503Q5A

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

CSD1850xQ5A 40V N-Channel NexFET Power MOSFETs

Texas Instruments CSD1850xQ5A devices are 40V N-Channel NexFET Power MOSFETs that are designed to minimize losses in power conversion applications. TI CSD18501Q5A features R DS(ON) Max @ VGS=4.5V of 4.3mΩ and R DS(ON) Max @ VGS=10V of 3.2mΩ while CSD18503Q5A features R DS(ON) Max @ VGS=4.5V of 6.2mΩ and R DS(ON) Max @ VGS=10V of 4.3mΩ. CSD18504Q5A features R DS(ON) Max @ VGS=4.5V of 9.8mΩ and R DS(ON) Max @ VGS=10V of 6.6mΩ. Texas Instruments CSD1850xQ5A 40V N-channel NexFET Power MOSFETs are ideal for use in DC-DC conversion, secondary side synchronous rectifier, and battery motor control applications.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	2.6 ns
Forward Transconductance - Min:	100 S
Id - Continuous Drain Current:	121 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	120 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	4.3 mOhms
Rise Time:	8.8 ns
Series:	CSD18503Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	4.5 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	1 N-Channel
Factory Pack Quantity	250
Fall Time	2.6 ns
Forward Transconductance - Min	100 S
Id - Continuous Drain Current	121 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSON-8
Packaging	Reel
Pd - Power Dissipation	120 W
Product Category	MOSFET
Qg - Gate Charge	32 nC
Rds On - Drain-Source Resistance	3.4 mOhms
Rise Time	8.8 ns
RoHS	No
Series	CSD18503Q5A
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	4.5 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	+/-20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Вес, г	0.24