ISO5451DWR, Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features 16-SOIC

ISO5451/ISO5451-Q1 IGBT/MOSFET Gate Driver

Texas Instruments ISO5451/ISO5451-Q1 Isolated IGBT/MOSFET Gate Driver is a 4.25kV RMS, basic isolated gate driver for IGBTs and MOSFETs with 2.5A source and 5A sink current. The input side operates from a single 3V to 5.5V supply. The output side allows for a supply range from 15V (min) to 30V (max). Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns assures accurate control of the output stage. An internal desaturation fault detection recognizes when the IGBT is in an overload condition. When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input. The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high. The ISO5451-Q1 devices from Texas Instruments are AEC-Q100 qualified for automotive applications.