2N4033 PBFREE, Bipolar Transistors - BJT PNP Ampl/Switch

Изображения служат только для ознакомления,
см. техническую документацию

2737 шт., срок 6-8 недель

510 руб.

от 10 шт. — 400 руб.

от 100 шт. — 302 руб.

от 500 шт. — 250.69 руб.

Добавить в корзину 1 шт. на сумму 510 руб.

Альтернативные предложения1

Номенклатурный номер: 8005049548

Артикул: 2N4033 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 80V 1A 400MHz 1,25W сквозное отверстие TO-39

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1 A
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	150 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-39
Packaging:	Bulk
Pd - Power Dissipation:	800 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP
Current - Collector (Ic) (Max)	1A
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
ECCN	EAR99
Frequency - Transition	400MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-205AD, TO-39-3 Metal Can
Power - Max	1.25W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Simulation Models	http://www.centralsemi.com/docs/csm/2N4033.LIB
Supplier Device Package	TO-39
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	80V
Вес, г	1.16