2N5179 PBFREE, Bipolar Transistors - BJT NPN VHF Amp

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1791 шт., срок 6-8 недель

1 540 руб.

от 10 шт. — 1 200 руб.

от 100 шт. — 877 руб.

от 250 шт. — 813.48 руб.

Добавить в корзину 1 шт. на сумму 1 540 руб.

Альтернативные предложения1

Номенклатурный номер: 8005049585

Артикул: 2N5179 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

РЧ транзистор NPN 12V 50mA 2GHz 200mW Through Hole TO-72

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	20 V
Collector- Emitter Voltage VCEO Max:	12 V
Collector-Emitter Saturation Voltage:	400 mV
Configuration:	Single
Continuous Collector Current:	50 mA
DC Collector/Base Gain hfe Min:	25
DC Current Gain hFE Max:	250
Emitter- Base Voltage VEBO:	2.5 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	2 GHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	50 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-72
Packaging:	Bulk
Pd - Power Dissipation:	200 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 3mA, 1V
ECCN	EAR99
Frequency - Transition	2GHz
Gain	15dB
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Noise Figure (dB Typ @ f)	4.5dB @ 200MHz
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-206AF, TO-72-4 Metal Can
Power - Max	200mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-72
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Вес, г	0.32