CEN-U05 PBFREE, Bipolar Transistors - BJT NPN 60Vcbo 60Vceo 2.0A 10W Pd 0.1uA

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135 шт., срок 6-8 недель

840 руб.

от 10 шт. — 660 руб.

от 100 шт. — 465 руб.

Добавить в корзину 1 шт. на сумму 840 руб.

Номенклатурный номер: 8005049762

Артикул: CEN-U05 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 60V 2A 50MHz 1,75W сквозное отверстие TO-202

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	350 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	4 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Packaging:	Bulk
Pd - Power Dissipation:	1.75 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 1V
ECCN	EAR99
Frequency - Transition	50MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-202 Long Tab
Power - Max	1.75W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-202
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350mV @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max)	60V
Вес, г	3.7