BC846B-7-F, Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23

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53 руб.

от 10 шт. — 38 руб.

от 100 шт. — 16 руб.

от 1000 шт. — 10.21 руб.

Добавить в корзину 1 шт. на сумму 53 руб.

Номенклатурный номер: 8005058122

Артикул: BC846B-7-F

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	65 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	200
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	310 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC846
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector-Emitter Breakdown Voltage	65V
Maximum DC Collector Current	100mA
Pd - Power Dissipation	300mW
Transistor Type	NPN
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Voltage	65 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	300 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	300 mW
Minimum DC Current Gain	200
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Вес, г	0.01