BC847B-7-F, Bipolar Transistors - BJT NPN BIPOLAR
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Описание Транзистор: NPN, биполярный, 45В, 0,1А, 350мВт, SOT23 Характеристики | Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 200 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 310 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC847B |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Base Product Number | BC847 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 15nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 300MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 300mW |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Collector-Emitter Breakdown Voltage | 45V |
| Maximum DC Collector Current | 100mA |
| Pd - Power Dissipation | 300mW |
| Maximum Collector Base Voltage | 50 V |
| Maximum Collector Emitter Voltage | 45 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 300 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Gain | 200 |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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