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DCX124EU-7-F, Digital Transistors COMP NPN/PNP 200mW

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85 руб.

от 10 шт. — 59 руб.

от 100 шт. — 23 руб.

от 1000 шт. — 16.14 руб.

Добавить в корзину 1 шт. на сумму 85 руб.

Номенклатурный номер: 8005058580

Артикул: DCX124EU-7-F

Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - Pre-Biased

DCX-U Pre-Biased Dual Transistors

Diodes Inc. DCX-U Pre-Biased Dual Transistors have built-in biasing resistors and Epitaxial Planar Die construction. The DCX-U have a surface mount package that is suited for automated assembly. They feature matte tin plated leads and are solderable per MIL-STD-202, Method 208.

Технические параметры

Brand:	Diodes Incorporated
Collector- Emitter Voltage VCEO Max:	50 V
Configuration:	Dual
Continuous Collector Current:	0.1 A
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	600
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SOT-363-6
Pd - Power Dissipation:	200 mW
Peak DC Collector Current:	100 mA
Product Category:	Bipolar Transistors-Pre-Biased
Product Type:	BJTs-Bipolar Transistors-Pre-Biased
Series:	DCX124
Subcategory:	Transistors
Transistor Polarity:	NPN, PNP
Typical Input Resistor:	22 kOhms
Typical Resistor Ratio:	1
Base Product Number	DCX124 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 5mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
REACH Status	REACH Unaffected
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-363
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300mV @ 500ВµA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	0.01