DMC2025UFDB-7, MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETsDiodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 9.3 ns, 13 ns |
| Id - Continuous Drain Current: | 6 A, 3.5 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | U-DFN2020-6 |
| Pd - Power Dissipation: | 1.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12.3 nC, 8.8 nC |
| Rds On - Drain-Source Resistance: | 25 mOhms, 75 mOhms |
| Rise Time: | 5.4 ns, 34.1 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Typical Turn-Off Delay Time: | 17.6 ns, 34.3 ns |
| Typical Turn-On Delay Time: | 3.4 ns, 22.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V, -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV, 1.4 V |
| Вес, г | 78 |
Техническая документация
Datasheet
pdf, 426 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
