DMN2120UFCL-7, MOSFET MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K

110 руб.
от 10 шт.83 руб.
от 100 шт.49 руб.
от 1000 шт.24.24 руб.
Добавить в корзину 1 шт. на сумму 110 руб.
Номенклатурный номер: 8005059204
Артикул: DMN2120UFCL-7
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETs Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 3000
Fall Time: 1.7 ns
Id - Continuous Drain Current: 1.8 A
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: U-DFN1616-6
Packaging: Reel, Cut Tape
Pd - Power Dissipation: 450 mW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 2.8 nC
Rds On - Drain-Source Resistance: 100 mOhms
Rise Time: 2.7 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 4.2 ns
Typical Turn-On Delay Time: 0.6 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Voltage: -12 V, +12 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Вес, г 9

Техническая документация

Datasheet
pdf, 444 КБ
Datasheet DMN2120UFCL-7
pdf, 518 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов