AIKW50N60CTXKSA1, IGBT Transistors DISCRETES

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2 860 руб.

от 10 шт. — 2 330 руб.

от 25 шт. — 1 980 руб.

от 100 шт. — 1 686.44 руб.

Добавить в корзину 1 шт. на сумму 2 860 руб.

Номенклатурный номер: 8005238355

Артикул: AIKW50N60CTXKSA1

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Полевой упор для траншеи IGBT, 600 В, 80 А, 333 Вт, сквозное отверстие PG-TO247-3-41

Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	240
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Packaging:	Tube
Part # Aliases:	AIKW50N60CT SP001346772
Pd - Power Dissipation:	333 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Base Product Number	AIKW50 ->
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	150A
ECCN	EAR99
Gate Charge	310nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	333W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	Automotive, AEC-Q101, TrenchStopв„ў ->
Supplier Device Package	PG-TO247-3-41
Switching Energy	1.2mJ (on), 1.4mJ (off)
Td (on/off) @ 25В°C	26ns/299ns
Test Condition	400V, 50A, 7Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)	600V
Вес, г	7