BC857BE6327HTSA1, Bipolar Transistors - BJT PNP 45 V 100 mA

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97 руб.

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Добавить в корзину 1 шт. на сумму 97 руб.

Номенклатурный номер: 8005238581

Артикул: BC857BE6327HTSA1

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание SOT23/AF ТРАНЗИСТОР

Brand:	Infineon Technologies
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hFE Min:	220
DC Current Gain hFE Max:	475
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	Infineon
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Part # Aliases:	BC 857B E6327 SP000010633
Pd - Power Dissipation:	330 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Base Product Number	BC857 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	330mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	45V
Вес, г	1