BSS84PWH6327XTSA1, MOSFET P-Ch -60V 150mA SOT-323-3
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Small Signal Power MOSFETsInfineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 20.5 ns |
Forward Transconductance - Min: | 80 mS |
Id - Continuous Drain Current: | 150 mA |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-323-3 |
Part # Aliases: | BSS84PW H6327 SP000917564 |
Pd - Power Dissipation: | 300 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.5 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 4.6 Ohms |
Rise Time: | 16.2 ns |
Series: | BSS84 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 8.6 ns |
Typical Turn-On Delay Time: | 6.7 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Base Product Number | BSS84 -> |
Current - Continuous Drain (Id) @ 25В°C | 150mA (Ta) |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
ECCN | EAR99 |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 19.1pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | SC-70, SOT-323 |
Power Dissipation (Max) | 300mW (Ta) |
Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | SIPMOSВ® -> |
Supplier Device Package | PG-SOT323-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 2V @ 20ВµA |
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 18000 |
Fall Time | 20.5 ns |
Forward Transconductance - Min | 80 mS |
Height | 0.9 mm |
Id - Continuous Drain Current | -150 mA |
Length | 2 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Packaging | Reel |
Part # Aliases | BSS84PW BSS84PWH6327XT H6327 SP000917564 |
Pd - Power Dissipation | 300 mW |
Product Category | MOSFET |
Qg - Gate Charge | 1.5 nC |
Rds On - Drain-Source Resistance | 4.6 Ohms |
Rise Time | 16.2 ns |
RoHS | Details |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 8.6 ns |
Typical Turn-On Delay Time | 6.7 ns |
Vds - Drain-Source Breakdown Voltage | -60 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | -2 V |
Width | 1.25 mm |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 431 КБ
Datasheet BSS84PWH6327XTSA1
pdf, 434 КБ
Дополнительная информация
Калькуляторы группы «Усилители – Инструментальные, Операционные, Буферные»
Типы корпусов импортных микросхем