BSZ009NE2LS5ATMA1, MOSFET TRENCH = 40V
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
740 руб.
от 10 шт. —
560 руб.
от 100 шт. —
438 руб.
от 250 шт. —
376.42 руб.
Добавить в корзину 1 шт.
на сумму 740 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
USB-C Chargers & Adapters Infineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 5000 |
Fall Time: | 17 ns |
Forward Transconductance - Min: | 70 S |
Id - Continuous Drain Current: | 40 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TSDSON-8 |
Packaging: | Reel, Cut Tape |
Part # Aliases: | BSZ009NE2LS5 SP002103848 |
Pd - Power Dissipation: | 69 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 92 nC |
Rds On - Drain-Source Resistance: | 960 uOhms |
Rise Time: | 9 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 31 ns |
Typical Turn-On Delay Time: | 7 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -16 V, +16 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Channel Type | N |
Maximum Continuous Drain Current | 223 A |
Maximum Drain Source Voltage | 25 V |
Mounting Type | Surface Mount |
Package Type | PG-TSDSON |
Вес, г | 0.04 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Микроконтроллеры»
Типы корпусов импортных микросхем