BSZ058N03LSGATMA1, MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 3.2 ns |
Forward Transconductance - Min: | 36 S |
Id - Continuous Drain Current: | 40 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TSDSON-8 |
Part # Aliases: | BSZ058N03LS G SP000307424 |
Pd - Power Dissipation: | 45 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 22 nC |
Rds On - Drain-Source Resistance: | 7.1 mOhms |
Rise Time: | 3.6 ns |
Series: | OptiMOS 3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 4.6 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | No Lead |
Maximum Continuous Drain Current (A) | 15 |
Maximum Drain Source Resistance (mOhm) | 5.8 10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2100 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | OptiMOS |
Product Category | Power MOSFET |
Standard Package Name | SON |
Supplier Package | TSDSON EP |
Typical Fall Time (ns) | 3.2 |
Typical Gate Charge @ 10V (nC) | 22 |
Typical Gate Charge @ Vgs (nC) | 11 4.5V|22 10V |
Typical Input Capacitance @ Vds (pF) | 1800 15V |
Typical Rise Time (ns) | 3.6 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Turn-On Delay Time (ns) | 4.6 |
Вес, г | 0.04 |