IPB156N22NFDATMA1, MOSFET DIFFERENTIATED MOSFETS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
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Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 60 S |
| Id - Continuous Drain Current: | 72 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | IPB156N22NFD SP001624408 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 66 nC |
| Rds On - Drain-Source Resistance: | 15.6 mOhms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 45 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 220 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 72 A |
| Maximum Drain Source Voltage | 220 V |
| Mounting Type | SMD |
| Package Type | PG-TO 263-3 |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 983 КБ
Datasheet IPB156N22NFDATMA1
pdf, 934 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
