IXA17IF1200HJ, IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs

IXA17IF1200HJ, IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
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Номенклатурный номер: 8005249772
Артикул: IXA17IF1200HJ
Бренд: Ixys Corporation

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Electrical Vehicle DC Fast Chargers DC charging stations are designed to convert the electrical grid"s AC power into DC power that can then be fed directly into a vehicle"s battery system for fast charging - in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Технические параметры

Brand: IXYS
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.8 V
Configuration: Single
Continuous Collector Current at 25 C: 28 A
Continuous Collector Current Ic Max: 18 A
Factory Pack Quantity: 30
Gate-Emitter Leakage Current: 500 nA
Manufacturer: IXYS
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +125 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Package/Case: ISOPLUS247-3
Packaging: Tube
Pd - Power Dissipation: 100 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si
Вес, г 6

Техническая документация

Datasheet
pdf, 195 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов