IXFK220N17T2, MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET

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Номенклатурный номер: 8005249897

Артикул: IXFK220N17T2

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, полевой, 170В, 220А, 1250Вт, TO264 Характеристики

Brand:	IXYS
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	25
Fall Time:	150 ns
Forward Transconductance - Min:	105 S
Id - Continuous Drain Current:	220 A
Manufacturer:	IXYS
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	1.25 kW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	500 nC
Rds On - Drain-Source Resistance:	6.3 mOhms
Rise Time:	160 ns
Series:	IXFK220N17
Subcategory:	MOSFETs
Technology:	Si
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	GigaMOS TrenchT2 HiperFET Power MOSFET
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	44 ns
Vds - Drain-Source Breakdown Voltage:	170 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Вес, г	127.7