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IXFX120N30T, MOSFET 120V 300V

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3 960 руб.

от 10 шт. — 3 320 руб.

Добавить в корзину 1 шт. на сумму 3 960 руб.

Номенклатурный номер: 8005250009

Артикул: IXFX120N30T

Бренд: Ixys Corporation

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

HiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Технические параметры

Brand:	IXYS
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	30
Fall Time:	23 ns
Forward Transconductance - Min:	70 S
Id - Continuous Drain Current:	120 A
Manufacturer:	IXYS
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	960 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	265 nC
Rds On - Drain-Source Resistance:	24 mOhms
Rise Time:	31 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	GigaMOS Power MOSFET
Typical Turn-Off Delay Time:	87 ns
Typical Turn-On Delay Time:	32 ns
Vds - Drain-Source Breakdown Voltage:	300 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Вес, г	6