IXYH85N120A4, IGBT Transistors IGBT XPT GEN 4 1200V TO247

IXYH85N120A4, IGBT Transistors IGBT XPT GEN 4 1200V TO247
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от 10 шт.4 620 руб.
от 30 шт.3 670 руб.
от 60 шт.3 292.91 руб.
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Номенклатурный номер: 8005250368
Артикул: IXYH85N120A4
Бренд: Ixys Corporation

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Electrical Vehicle DC Fast Chargers DC charging stations are designed to convert the electrical grid"s AC power into DC power that can then be fed directly into a vehicle"s battery system for fast charging - in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Технические параметры

Brand: IXYS
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.8 V
Configuration: Single
Continuous Collector Current at 25 C: 300 A
Continuous Collector Current Ic Max: 520 A
Factory Pack Quantity: 30
Gate-Emitter Leakage Current: 100 nA
Manufacturer: IXYS
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package/Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 1.15 kW
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Subcategory: IGBTs
Technology: Si

Техническая документация

Datasheet
pdf, 1136 КБ