2SB1386T100R, Bipolar Transistors - BJT PNP 20V 5A
778 шт., срок 7-9 недель
180 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
20V 2W 180@500mA,2V 5A PNP SOT-89 Bipolar Transistors - BJT ROHS
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 30 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 350 mV |
| Configuration: | Single |
| Continuous Collector Current: | -5 A |
| DC Collector/Base Gain hFE Min: | 82 |
| DC Current Gain hFE Max: | 390 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 120 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector-Emitter Breakdown Voltage | 20V |
| Maximum DC Collector Current | 5A |
| Pd - Power Dissipation | 2W |
| Transistor Type | PNP |
| кол-во в упаковке | 1 |
| Collector Current (Ic) | 5A |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 350mV@4A, 100mA |
| DC Current Gain (hFE@Ic,Vce) | 180@500mA, 2V |
| Operating Temperature | - |
| Power Dissipation (Pd) | 2W |
| Transition Frequency (fT) | 120MHz |
| Вес, г | 0.13 |
Техническая документация
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