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RD3H045SPFRATL, MOSFET Pch -45V Vdss -4.5A TO-252(DPAK); TO-252

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3648 шт., срок 6-8 недель

340 руб.

от 10 шт. — 280 руб.

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Альтернативные предложения2

Номенклатурный номер: 8005264975

Артикул: RD3H045SPFRATL

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

AEC-Q101 Automotive MOSFETs ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100VDSS to 100VDSS. These MOSFETs offer a drain-current ranging from -25A to 40A and RDS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

Технические параметры

Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2500
Fall Time:	8 ns
Forward Transconductance - Min:	3 S
Id - Continuous Drain Current:	4.5 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DPAK-3(TO-252-3)
Part # Aliases:	RD3H045SPFRA
Pd - Power Dissipation:	15 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	12 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	155 mOhms
Rise Time:	8 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	45 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.33