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RD3H160SPTL1, MOSFET Pch -45V -16A TO-252(DPAK)

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16156 шт., срок 6-8 недель

480 руб.

от 10 шт. — 350 руб.

от 100 шт. — 268 руб.

от 500 шт. — 216.37 руб.

Добавить в корзину 1 шт. на сумму 480 руб.

Альтернативные предложения1

Номенклатурный номер: 8005264977

Артикул: RD3H160SPTL1

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Silicon Power MOSFETs ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Технические параметры

Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2500
Fall Time:	50 ns
Id - Continuous Drain Current:	16 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DPAK-3(TO-252-3)
Part # Aliases:	RD3H160SP
Pd - Power Dissipation:	20 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	16 nC
Rds On - Drain-Source Resistance:	35 mOhms
Rise Time:	22 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	45 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	16 A
Maximum Drain Source Voltage	45 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-252
Pin Count	3
Transistor Material	Si
Вес, г	0.36