RGS50TSX2DHRC11, IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for aut
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
RGS Field Stop Trench Automotive IGBTsROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (V CE(sat) ) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 50 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 500 nA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Gate Emitter Voltage: | -30 V, +30 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247N-3 |
| Packaging: | Tube |
| Part # Aliases: | RGS50TSX2DHR |
| Pd - Power Dissipation: | 395 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Qualification: | AEC-Q101 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 15.99 |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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