RGT16BM65DTL, IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and hi
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Field Stop Trench IGBTs ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 16 A |
| Factory Pack Quantity: | 2500 |
| Gate-Emitter Leakage Current: | 200 nA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | TO-252-3 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | RGT16BM65D |
| Pd - Power Dissipation: | 94 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 0.46 |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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