2SA1362-GR,LF, Bipolar Transistors - BJT PNP TRANSISTO

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5900 шт., срок 7-9 недель

120 руб.

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Номенклатурный номер: 8005268091

Артикул: 2SA1362-GR,LF

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 15V 800mA 120MHz 200mW Surface Mount S-Mini

Brand:	Toshiba
Collector- Base Voltage VCBO:	15 V
Collector- Emitter Voltage VCEO Max:	15 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Single
DC Collector/Base Gain hFE Min:	120
DC Current Gain hFE Max:	400
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	120 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	800 mA
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package/Case:	SC-59-3
Pd - Power Dissipation:	200 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Base Product Number	RN4603 ->
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 1V
ECCN	EAR99
Frequency - Transition	120MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200mW
RoHS Status	RoHS non-compliant
Supplier Device Package	S-Mini
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	200mV @ 8mA, 400mA
Voltage - Collector Emitter Breakdown (Max)	15V
Вес, г	0.01