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2SC4116-GR,LF, Bipolar Transistors - BJT USM PLN TRANSISTOR Pd=100mW F=80MHz

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231684 шт., срок 7-9 недель

52 руб.

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Альтернативные предложения2

Номенклатурный номер: 8005268115

Артикул: 2SC4116-GR,LF

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Технические параметры

Brand:	Toshiba
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	100 mV
Configuration:	Single
Continuous Collector Current:	150 mA
DC Collector/Base Gain hFE Min:	70
DC Current Gain hFE Max:	700
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	80 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	150 mA
Maximum Operating Temperature:	+125 C
Mounting Style:	SMD/SMT
Package/Case:	SC-70-3
Pd - Power Dissipation:	100 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector-Emitter Breakdown Voltage	50V
Maximum DC Collector Current	150mA
Pd - Power Dissipation	100mW
Transistor Type	NPN
Вес, г	0.03