2SC4117-BL,LF, Bipolar Transistors - BJT Transistor for Low Freq. Amplification
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.
Технические параметры
| Brand: | Toshiba |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| DC Collector/Base Gain hFE Min: | 200 |
| DC Current Gain hFE Max: | 700 at 2 mA, 6 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Toshiba |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +125 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SC-70-3 |
| Pd - Power Dissipation: | 100 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Base Product Number | TC4069 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| ECCN | EAR99 |
| Frequency - Transition | 100MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 125В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | SC-70, SOT-323 |
| Power - Max | 100mW |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | USM |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 731 КБ
Datasheet 2SC4117-BL,LF
pdf, 726 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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