SSM3K341TU,LF, MOSFET LowON Res MOSFET ID=6A VDSS=60V

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7160 шт., срок 7-9 недель

120 руб.

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Номенклатурный номер: 8005268636

Артикул: SSM3K341TU,LF

Бренд: Toshiba

N-Channel 60V 6A (Ta) 1.8W (Ta) Surface Mount UFM

Base Product Number	TLP371 ->
Current - Continuous Drain (Id) @ 25В°C	6A (Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	175В°C
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	3-SMD, Flat Lead
Power Dissipation (Max)	1.8W (Ta)
Rds On (Max) @ Id, Vgs	36mOhm @ 4A, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVIII-H ->
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 100ВµA
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Material	Si
Maximum Continuous Drain Current (A)	6
Maximum Drain Source Resistance (mOhm)	36 10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	1800
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	Unknown
Process Technology	U-MOS VIII-H
Product Category	Power MOSFET
Supplier Package	UFM
Typical Fall Time (ns)	6
Typical Gate Charge @ 10V (nC)	9.3
Typical Gate Charge @ Vgs (nC)	9.3 10V
Typical Input Capacitance @ Vds (pF)	550 10V
Typical Rise Time (ns)	48
Вес, г	0.0066