SSM6J402TU,LF, MOSFET Small Signal MOSFET P-ch VDSS=-30V, VGSS=+/-20V, ID=-2.0A, RDS(ON)=0.225Ohm a. 4V, in UF6 package

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2558 шт., срок 6-8 недель

140 руб.

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Номенклатурный номер: 8005268663

Артикул: SSM6J402TU,LF

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount UF6

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Id - Continuous Drain Current:	2 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	UF-6
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	5.3 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	117 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Base Product Number	2SA1930 ->
Current - Continuous Drain (Id) @ 25В°C	2A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.3nC @ 10V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	117mOhm @ 1A, 10V
RoHS Status	RoHS non-compliant
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Вес, г	0.01