SSM6J512NU,LF, MOSFET Small-signal MOSFET Vdss=-12V, Id=-10A
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSVII MOSFETs Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | UDFN-6 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19.5 nC |
| Rds On - Drain-Source Resistance: | 40.1 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Base Product Number | TC7SZ04 -> |
| Current - Continuous Drain (Id) @ 25В°C | 10A (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-WDFN Exposed Pad |
| Power Dissipation (Max) | 1.25W (Ta) |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 4A, 8V |
| RoHS Status | RoHS Compliant |
| Series | U-MOSVII -> |
| Supplier Device Package | 6-UDFNB (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 435 КБ
Datasheet SSM6J512NU,LF
pdf, 370 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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