Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Toshiba › SSM6N35AFU,LF, MOSFET LowON Res MOSFET ...

SSM6N35AFU,LF, MOSFET LowON Res MOSFET ID=.25A VDSS=20V

Изображения служат только для ознакомления,
см. техническую документацию

3218 шт., срок 6-8 недель

120 руб.

Добавить в корзину 1 шт. на сумму 120 руб.

Номенклатурный номер: 8005268695

Артикул: SSM6N35AFU,LF

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

SSM6x N- & P-Channel MOSFETs Toshiba SSM6x N- and P-Channel MOSFETs with high-speed switching operate as both power management and analog switches. These MOSFETs provide very low on-resistance (as low as 1.1mΩ to a 115mΩ maximum) for different gate-to-source voltage ranges. The SSM6x MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance, operate as DC-to-DC converters, and drive a 1.2V to 4.5V gate voltage. The Toshiba SSM6x MOSFETs deliver less drain power dissipation (up to 150mW), producing less heat while operating within a 12V to 100V input voltage range.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	3000
Fall Time:	5.5 ns, 5.5 ns
Forward Transconductance - Min:	0.5 S, 0.5 S
Id - Continuous Drain Current:	250 mA
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SOT-363-6
Pd - Power Dissipation:	285 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	340 pC
Rds On - Drain-Source Resistance:	750 mOhms, 750 mOhms
Rise Time:	2 ns, 2 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	6.5 ns, 6.5 ns
Typical Turn-On Delay Time:	2 ns, 2 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	350 mV
Вес, г	0.01