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TK10E80W,S1X, MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220AB(OS) PD=130W F=1MHZ

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82 шт., срок 7-9 недель

1 010 руб.

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Номенклатурный номер: 8005269350

Артикул: TK10E80W,S1X

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

DTMOSVI MOSFETs Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	50
Fall Time:	10 ns
Id - Continuous Drain Current:	9.5 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	130 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	550 mOhms
Rise Time:	35 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	120 ns
Typical Turn-On Delay Time:	65 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	2