Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Nexperia › BUK9M7R2-40EX, MOSFET BUK9M7R2-40E/ SOT1210/mLFPAK

BUK9M7R2-40EX, MOSFET BUK9M7R2-40E/ SOT1210/mLFPAK

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см. техническую документацию

1859 шт., срок 6-8 недель

270 руб.

от 10 шт. — 210 руб.

от 100 шт. — 155 руб.

от 500 шт. — 123.15 руб.

Добавить в корзину 1 шт. на сумму 270 руб.

Альтернативные предложения1

Номенклатурный номер: 8005274362

Артикул: BUK9M7R2-40EX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Automotive MOSFETs
Nexperia Automotive MOSFETs comprise a range of AEC-Q101-qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment far more hostile than power MOSFETs used in home and portable applications and are suitable for thermally demanding environments due to a +175°C rating.

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1500
Id - Continuous Drain Current:	70 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	LFPAK-33-8
Part # Aliases:	934070079115
Pd - Power Dissipation:	79 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19.7 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	5.8 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	70
Maximum Drain Source Resistance (mOhm)	5.8@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	2.1
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	79000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	Unknown
Process Technology	TMOS
Product Category	Power MOSFET
Supplier Package	LFPAK EP
Supplier Temperature Grade	Automotive
Typical Fall Time (ns)	22
Typical Gate Charge @ Vgs (nC)	19.7@5V
Typical Input Capacitance @ Vds (pF)	1930@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	133@25V
Typical Rise Time (ns)	28.5
Typical Turn-Off Delay Time (ns)	29.9
Typical Turn-On Delay Time (ns)	13.8
Вес, г	8