VS-GP400TD60S, IGBT Transistors Ic 400A Vce(On)1.30V Half Brdge Trench P
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
IGBT Power Modules Vishay IGBT Power Modules feature trench PT IGBT technology and are geared toward TIG welding machines. These IGBTs combine Hexfred and Fret PT diode technology and meet UL standards. Features like INT-A-PAK allow for designs with limited height requirements on the board that need high voltages and currents. These modules are also used in applications like appliance motor drives, electric vehicle motor drives, solar inverters, UPS and power factor correction converters. Learn More
Технические параметры
| Brand: | Vishay Semiconductors |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.3 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 758 A |
| Continuous Collector Current Ic Max: | 758 A |
| Factory Pack Quantity: | 12 |
| Gate-Emitter Leakage Current: | +/-750 nA |
| Manufacturer: | Vishay |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Screw Mount |
| Package/Case: | DIAP |
| Pd - Power Dissipation: | 1.563 kW |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 334 |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
