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SI2301-TP, MOSFET P-CH -20V -2.8A 8S

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130 руб.

от 10 шт. — 91 руб.

от 100 шт. — 43 руб.

от 500 шт. — 36.33 руб.

Добавить в корзину 1 шт. на сумму 130 руб.

Номенклатурный номер: 8005354832

Артикул: SI2301-TP

Бренд: Micro Commercial Components Corp. (MCC)

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

P-Channel MOSFETS Micro Commercial Components (MCC) P-Channel Medium Power MOSFETS feature a low on-resistance (RDS) range from 0.013Ω to 0.52Ω and a high voltage version up to 800V. These MOSFETs utilize advanced trench MOSFET process technology in a wide range of surface-mount packages, including SOT, DFN, SOP, and Dpak. The P-Channel MOSFETs have an operating temperature range from -55°C to 150°C or 175°C.

Технические параметры

Brand:	Micro Commercial Components(MCC)
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Forward Transconductance - Min:	8 S
Id - Continuous Drain Current:	2.8 A
Manufacturer:	Micro Commercial Components(MCC)
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23-3
Pd - Power Dissipation:	1.25 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	14.5 nC
Rds On - Drain-Source Resistance:	110 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Continuous Drain Current (Id) @ 25В°C	2.8A
Power Dissipation-Max (Ta=25В°C)	1.25W
Rds On - Drain-Source Resistance	120mО© @ 2.8A,4.5V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	20V
Vgs - Gate-Source Voltage	450mV @ 250uAпј€Minпј‰
Вес, г	0.01