IS43QR16256B-083RBLI, DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s a. 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT

IS43QR16256B-083RBLI, DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s a. 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT
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3 100 руб.
от 10 шт.2 730 руб.
от 25 шт.2 480 руб.
от 100 шт.2 232.13 руб.
Добавить в корзину 1 шт. на сумму 3 100 руб.
Номенклатурный номер: 8005378397
Артикул: IS43QR16256B-083RBLI

Описание

Semiconductors\Memory ICs\DRAM
DDR4 DRAM ISSI DDR4 DRAM is a high-speed dynamic random-access memory device internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups, each with four DRAM banks. DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps, making them ideal for telecom and networking, automotive, and industrial embedded computing.

Технические параметры

Brand: ISSI
Data Bus Width: 16 bit
Factory Pack Quantity: 198
Manufacturer: ISSI
Maximum Clock Frequency: 1.2 GHz
Maximum Operating Temperature: +95 C
Memory Size: 4 Gbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organization: 256 M x 16
Package / Case: BGA-96
Packaging: Tray
Product Category: DRAM
Product Type: DRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 187 mA
Supply Voltage - Max: 1.26 V
Supply Voltage - Min: 1.14 V
Type: SDRAM-DDR4
Вес, г 3

Техническая документация

Datasheet
pdf, 193 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем