IS43QR16256B-083RBLI, DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s a. 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 100 руб.
от 10 шт. —
2 730 руб.
от 25 шт. —
2 480 руб.
от 100 шт. —
2 232.13 руб.
Добавить в корзину 1 шт.
на сумму 3 100 руб.
Описание
Semiconductors\Memory ICs\DRAM
DDR4 DRAM ISSI DDR4 DRAM is a high-speed dynamic random-access memory device internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups, each with four DRAM banks. DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps, making them ideal for telecom and networking, automotive, and industrial embedded computing.
Технические параметры
Brand: | ISSI |
Data Bus Width: | 16 bit |
Factory Pack Quantity: | 198 |
Manufacturer: | ISSI |
Maximum Clock Frequency: | 1.2 GHz |
Maximum Operating Temperature: | +95 C |
Memory Size: | 4 Gbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 256 M x 16 |
Package / Case: | BGA-96 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 187 mA |
Supply Voltage - Max: | 1.26 V |
Supply Voltage - Min: | 1.14 V |
Type: | SDRAM-DDR4 |
Вес, г | 3 |
Техническая документация
Datasheet
pdf, 193 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем