Главная › Электронные компоненты › Микросхемы › Микросхемы памяти › Alliance Memory › AS4C16M16MSA-6BIN, DRAM 256M 166MHz 16Mx16 ...

AS4C16M16MSA-6BIN, DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT

Изображения служат только для ознакомления,
см. техническую документацию

1 970 руб.

от 10 шт. — 1 730 руб.

от 25 шт. — 1 690 руб.

от 100 шт. — 1 414.03 руб.

Добавить в корзину 1 шт. на сумму 1 970 руб.

Номенклатурный номер: 8005389258

Артикул: AS4C16M16MSA-6BIN

Бренд: Alliance Memory Inc

Описание

Semiconductors\Memory ICs\DRAM

Mobile Low Power SDRAMs Alliance Memory Mobile Low Power SDRAMs are high-performance CMOS Dynamic RAMs (DRAM) with a 64ms refresh period (4K cycle). These devices feature advanced circuit design to provide low active current and extremely low standby current. The low power features include Auto Temperature Compensated Self Refresh (TCSR), partial array self-refresh power-saving mode, deep power-down mode, and driver strength control.

Технические параметры

Access Time:	6 ns
Brand:	Alliance Memory
Data Bus Width:	16 bit
Factory Pack Quantity:	319
Manufacturer:	Alliance Memory
Maximum Clock Frequency:	166 MHz
Maximum Operating Temperature:	+85 C
Memory Size:	256 Mbit
Minimum Operating Temperature:	-40 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Organization:	16 M x 16
Package / Case:	FBGA-54
Packaging:	Tray
Product Category:	DRAM
Product Type:	DRAM
Subcategory:	Memory & Data Storage
Supply Current - Max:	80 mA
Supply Voltage - Max:	1.95 V
Supply Voltage - Min:	1.7 V
Type:	SDRAM Mobile
Access Time	5.5ns
Clock Frequency	166MHz
ECCN	EAR99
HTSUS	8542.32.0024
Memory Format	DRAM
Memory Interface	Parallel
Memory Size	256Mb (16M x 16)
Memory Type	Volatile
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Mounting Type	Surface Mount
Operating Temperature	-40В°C ~ 85В°C (TA)
Package	Tray
Package / Case	54-VFBGA
REACH Status	REACH Unaffected
Supplier Device Package	54-FBGA (8x8)
Technology	SDRAM - Mobile SDRAM
Voltage - Supply	1.7V ~ 1.95V