AS4C2M32S-6BIN, DRAM SDRAM, 64Mb, 2M X 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray
![AS4C2M32S-6BIN, DRAM SDRAM, 64Mb, 2M X 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray](https://static.chipdip.ru/lib/659/DOC046659497.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 670 руб.
от 10 шт. —
1 460 руб.
от 100 шт. —
1 300 руб.
Добавить в корзину 1 шт.
на сумму 1 670 руб.
Описание
Semiconductors\Memory ICs\DRAM
AS4C SDRAM Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.
Технические параметры
Access Time: | 5.4 ns |
Brand: | Alliance Memory |
Data Bus Width: | 32 bit |
Factory Pack Quantity: | 190 |
Manufacturer: | Alliance Memory |
Maximum Clock Frequency: | 166 MHz |
Maximum Operating Temperature: | +85 C |
Memory Size: | 64 Mbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organisation: | 2 M x 32 |
Package/Case: | TFBGA-90 |
Packaging: | Tray |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 95 mA |
Supply Voltage - Max: | 3.6 V |
Supply Voltage - Min: | 3 V |
Type: | SDRAM |
Техническая документация
Datasheet
pdf, 1260 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
Похожие товары